technical data sheet gort road business park, ennis, co. clare, ireland. 6 lake street, lawrence, ma 01841 tel: +353 (0) 65 6840044, fax: +353 (0) 65 6822298 tel: 1-800-446-1158 / (978) 794-1666, fax: (978) 6890803 website: http://www.microsemi.com rf01021 rev a, october 2010 hi gh reliability product group page 1 of 4 devices msmbjsac5.0 thru msmbjsac75, e3 levels m, ma, mx, mxl features ? high reliability controlled devices with wafer fabrication and as sembly lot traceability ? 100 % surge tested devices ? optional up screening available by replacing the m pref ix with ma, mx or mxl. these prefixes specify various screening and conformance inspec tion options based on mil-prf- 19500. refer to micronote 129 for more details on the screening options ? low capacitance performance of 30pf ? suppresses transients up to 500 w peak pulse power @ 10/1000 ? moisture classification is level 1 with no dry pack required per ipc/jedec j -std- 020b ? rohs compliant devices ava ilable by adding an e3 suffix ? 3 lot norm screening performed on standby current i d applications / benefits ? low capacitance for data-line protection to 10 mhz ? protection for aircraft fast data rate lines per select waveforms in rtca/do- 160 f (see micronote 130 for waveform 4 and 5a capability) & arinc 429 with bit rates of 100 kb/s (per arinc 429, part 1, par. 2.4.1.1) ? esd and eft protection per iec61000-4-2 and iec61000-4-4 respectively ? secondary lightning protection per iec61 000 -4-5 with 42 ohms source impedance: o class 1: msmbjsac5.0 to msmbjsac75 o class 2: msmbjsac5.0 to msmbjsac45 o class 3: msmbjsac5.0 to msmbjsac22 o class 4: msmbjsac5.0 to msmbjsac10 ? secondary lightning protection per iec61000-4-5 with 12 ohms source impedance o class 1: msmbjsac5.0 to msmbjsac26 o class 2: msmbjsac5.0 to msmbjsac15 o class 3: msmbjsac5.0 to msmbjsac7.0 maximum ratings ? peak pulse power dissipation at 25 oc : 5 00 watts at 10/1000 s with impulse repetition rate (duty factor) of 0.01 % or less* ? t clamping (0 volts to v br min.): < 5 ns theoretical for unidirectional ? operating and storage temperature: - 65 c to +150 c ? steady-state power dissipation*: 2.5 watts at tl = +7 5 oc ? solder temperatures: 260 oc for 10 s (maximum) * tvs devices are not typically used for dc power dissipat ion and are instead operated < v wm (rated standoff voltage) except for transients that briefly drive the dev ice into avalanche breakdown (v br to v c region) of the tvs element. also see figures 5 and 6 for further protec tion details in rated peak pulse power for unidirectional and bidirectional configurations respectively. do -214aa surface mount 500 watt low capacitance transient voltage suppressor - high reliability controlled devices - unidirectional construction - available j-bend termination - selections for 5.0 to 75 v standoff voltages (v wm ) downloaded from: http:///
technical data sheet gort road business park, ennis, co. clare, ireland. 6 lake street, lawrence, ma 01841 tel: +353 (0) 65 6840044, fax: +353 (0) 65 6822298 tel: 1-800-446-1158 / (978) 794-1666, fax: (978) 6890803 website: http://www.microsemi.com ___________________________________________________ ___________________________________________________ ___________________________ __ rf01021 rev a, october 2010 hi gh reliability product group page 2 of 4 mechanical and packaging ? void-free transfer molded thermosetting epoxy body meeting ul94v- 0 ? j-bend tin-lead (90 % sn, 10 % pb) or rohs (100 % sn) compliant annealed matte-tin plating solderable per mil-std-750, method 2026 ? cathode indicated by band ? part number marked on package ? available in bulk or custom t ape & reel packaging ? weight : 0.1 gram (approximate ly ) package dimensio ns pad layout symbols & definitions symbol definition symbol definition v wm working peak (standoff) voltage i pp peak pulse current p pp peak pulse power v c clamping voltage v br breakdown voltage i br breakdown current for v br i d standby current downloaded from: http:///
technical data sheet gort road business park, ennis, co. clare, ireland. 6 lake street, lawrence, ma 01841 tel: +353 (0) 65 6840044, fax: +353 (0) 65 6822298 tel: 1-800-446-1158 / (978) 794-1666, fax: (978) 6890803 website: http://www.microsemi.com ___________________________________________________ ___________________________________________________ ___________________________ __ rf01021 rev a, october 2010 hi gh reliability product group page 3 of 4 electrical characteristics @ 25 o c microsemi part number reverse stand-off voltage (note 1) v wm volts breakdown voltage @ i (br) 1.0ma v (br) volts min. maximum standby current @v wm i d a maximum clamping voltage i p = 5.0a* v c volts maximum peak pulse current* rating i pp amps maximum capacitance @ o volts, f=1 mhz pf working inverse blocking voltage v wib volts inverse blocking leakage current i ib @ v wib a peak inverse blocking voltage v pib volts msmbjsac5.0 msmbjsac6.0 5.0 6.0 7.60 7.90 300 300 10.0 11.2 44 41 30 30 75 75 10 10 100 100 msmbjsac7.0 msmbjsac8.0 7.0 8.0 8.33 8.89 300 100 12.6 13.4 38 36 30 30 75 75 10 10 100 100 msmbjsac8.5 msmbjsac10 8.5 10 9.44 11.10 50 5.0 14.0 16.3 34 29 30 30 75 75 10 10 100 100 msmbjsac12 msmbjsac15 12 15 13.30 16.70 5.0 5.0 19.0 23.6 25 20 30 30 75 75 10 10 100 100 msmbjsac18 msmbjsac22 18 22 20.00 24.40 5.0 5.0 28.8 35.4 15 14 30 30 75 75 10 10 100 100 msmbjsac26 msmbjsac36 26 36 28.90 40.0 5.0 5.0 42.3 60.0 11.1 8.6 30 30 75 75 10 10 100 100 msmbjsac45 msmbjsac50 45 50 50.00 55.50 5.0 5.0 77.0 88.0 6.8 5.8 30 30 150 150 10 10 200 200 msmbjsac75 75 83.3 5.0 121 4.1 30 150 10 200 *see figure 3. for the msmbjsac75, the maximum clampi ng voltage v c is at the maximum rated peak pulse current (i pp ) of 4.1 amps. clamping factor: the ratio of the numerical value of v c to v (br) is typically 1.4 @ full rated power, 1.20 @ 50% rated power. also see micronote 108. note 1: a transient voltage suppressor is normally selected accordi ng to voltage (v wm ), that should be equal to or greater than the dc or continuous peak operating voltage level. note 2: when pulse testing, test in tvs avalanche direction. do not pulse in forward direction. see section for schematic appli cations herein. graphs downloaded from: http:///
technical data sheet gort road business park, ennis, co. clare, ireland. 6 lake street, lawrence, ma 01841 tel: +353 (0) 65 6840044, fax: +353 (0) 65 6822298 tel: 1-800-446-1158 / (978) 794-1666, fax: (978) 6890803 website: http://www.microsemi.com ___________________________________________________ ___________________________________________________ ___________________________ __ rf01021 rev a, october 2010 hi gh reliability product group page 4 of 4 graphs cont. schematic applications the tvs low capacitance device configuration is shown in figure 4. as a further option for unidirectional applications, an addit ional low capacitance rectifier diode may be used in parallel in the sa me polarity direction as the tvs as shown in figure 5. in appli cations where random high voltage transients occur, this will prevent re verse transients from damaging the internal low capacitance rectifier diode and also provide a low voltage conducting direction. the added rectifier diode should be of similar low capacitance and also have a high er reverse voltage rating than the tvs clamping voltage v c . if using two (2) low capacitance tvs devices in anti-paralle l for bidirectional applications, this added protective featur e for both directions (including the reverse of each rectifier diode) is inherently pro vided in figure 6. the unidirectional and bidirectional configurations in figure 5 and 6 will both result in twice the capacitance of figure 4. downloaded from: http:///
|
